Oct 9 News 583 Views
Cree continues to lead in innovation of high power LEDs producing a significant improvement popular led Cree XT-E.
Due to the benefits of technology SC5 in a new and better collection diodes of XT-E has a new option Cree XT-E High Efficiency HE. This option gives the minimum guaranteed efficiency 164 lmft at T=85 °C current of 350 mA. This allows to obtain the efficiency of the system at 130 lmvt in the real world. Customers can immediately increase system performance in such applications as street and industrial lighting, preserving the low system cost.
Cree XT-E HE new level of a relationship anaplastologist
We need to produce the most energy efficient industrial lighting solutions and the newly improved led Cree XT-E High Efficiency allows us to do this without any additional investment and rework says Colin Piepgras Vice-President of the Digital Lumens with the new XT-E we can use existing optical mechanical and electrical design elements to quickly improve our portfolio of intelligent lighting solutions.
The new XT-E increased light output, reduced forward voltage drop and superior optical performance. Today for the XT-E has been received LM-80 for a period of more than 10 thousand hours according to which a decrease in light output over time 60000 hours on the current 1A and the temperature at the soldering point 105 °C is just 10%.
Cree Inc. was founded in 1987 in North Carolina USA. The main focus of the company was and remains to this day the development and production of semiconductor materials based on silicon carbide SiC. In the early 90-ies the company started intensive research in the field of light emitting structures of gallium nitride GaN and solid solutions on its basis on substrates of SiC. Thanks to the unique technology of production of semiconductor materials based on SiC products CREE has the highest reliability and unattainable for competitors electrical characteristics making possible its application in household and industrial and space equipment.
Today, Cree is the world leader in the production of single crystals of silicon carbide and has a leading position as a manufacturer of semiconductor devices based on SiC and GaN on SiC substrates.
The company's website httpwww.cree.com
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