Cree Inc. was founded in 1981 in North Carolina USA. The main focus of the company was and remains to this day the development and production of semiconductor materials based on silicon carbide SiC. In the early 90-ies the company started intensive research in the field of light emitting structures of gallium nitride GaN and solid solutions on its basis on substrates of SiC. Thanks to the unique technology of production of semiconductor materials based on SiC products CREE has the highest reliability and unattainable for competitors electrical characteristics making possible its application in household and industrial and space equipment.
Today, Cree is the world leader in the production of single crystals of silicon carbide and has a leading position as a manufacturer of semiconductor devices based on SiC and GaN on SiC substrates.
Currently, Cree has formed five major